900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

D2453 Datasheet

2SD2453

No Preview Available !

Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplification
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Base current
Collector power
dissipation
TC = 25°C
VCBO
VCEO
VEBO
IC
ICP
IB
PC
80
60
6
2
4
1
10
1
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) Non-repetitive peak collector current
Unit
V
V
V
A
A
A
W
°C
°C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
12
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
3
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Emiter-base cutoff current (Collector open) IEBO
Forward current transfer ratio *
hFE
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
IC = 25 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
IC = 2 A, IB = 0.05 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
60 V
100 µA
100 µA
100 µA
500 2 500
1V
50 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE 500 to 1 000 800 to 1 500 1 200 to 2 500
Publication date: September 2003
SJD00268AED
1


Panasonic Electronic Components Datasheet

D2453 Datasheet

2SD2453

No Preview Available !

2SD2453
PC Ta
12
Without heat sink
10
8
6
4
2
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
IC VCE
1.0
IB=1.2mA
TC=25˚C
1mA
0.8
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
0.2mA
0.2
0.1mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC/IB=40
10
TC=100˚C
25˚C
1
–25˚C
0.1
hFE IC
104
TC=100˚C
25˚C
103
–25˚C
VCE=4V
102
10
IC VBE
5
4 25˚C
TC=100˚C
–25˚C
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
fT IC
104
VCE=12V
f=200MHz
TC=25˚C
103
102
10
0.01
0.01
0.1 1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
Safe operation area
100 Non repetitive pulse
TC=25˚C
10
ICP
IC
1
t=1ms
t=10ms
t=1s
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
2 SJD00268AED


Part Number D2453
Description 2SD2453
Maker Panasonic Semiconductor
PDF Download

D2453 Datasheet PDF






Similar Datasheet

1 D2450N Rectifier Diode
Infineon
2 D2453 2SD2453
Panasonic Semiconductor
3 D2454 2SD2454
ETC
4 D2457 2SD2457
Panasonic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy