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D2527 - 2SD2527

Features

  • q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC IB PC 80 60 6 8 4 1 40 2.0 Junction temperatu.

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Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC IB PC 80 60 6 8 4 1 40 2.0 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A A W ˚C ˚C 13.7±0.2 4.2±0.2 15.0±0.5 9.9±0.3 4.6±0.2 2.9±0.2 3.0±0.5 φ3.2±0.
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