q Large collector power dissipation PC. q Low collector to emitter saturation voltage VCE(sat). s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SD592 base voltage 2SD592A Collector to 2SD592 emitter voltage 2SD592A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
VCBO
VCEO
VEBO ICP IC PC Tj Tstg
Ratings 30 60 25 50 5 1.5 1 750 150.
Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB621 and 2SB621A
s Features
q Large collector power dissipation PC. q Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SD592 base voltage 2SD592A Collector to 2SD592 emitter voltage 2SD592A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
VCBO
VCEO
VEBO ICP IC PC Tj Tstg
Ratings 30 60 25 50 5 1.5 1 750 150
–55 ~ +150
Unit
V
V
V A A mW ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.