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Panasonic Electronic Components Datasheet

D592 Datasheet

2SD592

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Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB621 and 2SB621A
s Features
q Large collector power dissipation PC.
q Low collector to emitter saturation voltage VCE(sat).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD592
base voltage 2SD592A
Collector to 2SD592
emitter voltage 2SD592A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
1.5
1
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base 2SD592
voltage
2SD592A
Symbol
ICBO
VCBO
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
min typ max Unit
0.1 µA
30
V
60
Collector to emitter 2SD592
voltage
2SD592A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IC = 2mA, IB = 0
25
50
V
IE = 10µA, IC = 0
VCE = 10V, IC = 500mA*2
VCE = 5V, IC = 1A*2
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
5
85 160 340
50
0.2 0.4
0.85 1.2
V
V
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
1


Panasonic Electronic Components Datasheet

D592 Datasheet

2SD592

No Preview Available !

Transistor
PC — Ta
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3
1
Ta=75˚C
0.3
25˚C
0.1 –25˚C
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
200 VCB=10V
Ta=25˚C
fT — IE
160
120
80
40
0
–1 –3 –10 –30 –100
Emitter current IE (mA)
IC — VCE
1.50
Ta=25˚C
1.25
1.00
0.75
0.50
0.25
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
1 Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
50
IE=0
f=1MHz
Ta=25˚C
40
30
20
10
0
13
10 30 100
Collector to base voltage VCB (V)
2SD592, 2SD592A
1.2
VCE=10V
Ta=25˚C
1.0
IC — IB
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Base current IB (mA)
hFE — IC
600
VCE=10
500
400
300
Ta=75˚C
200
25˚C
–25˚C
100
0
0.01 0.03 0.1 0.3 1 30
Collector current IC (A)
100
VCER — RBE
120
IC=10mA
Ta=25˚C
100
80
60
2SD592A
40
2SD592
20
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance RBE (k)
2


Part Number D592
Description 2SD592
Maker Panasonic Semiconductor
Total Page 3 Pages
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