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DMA206E1 Datasheet

Silicon PNP epitaxial planar type Transistor

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DMA506E1
Silicon PNP epitaxial planar type
For general amplification
DMA206E1 in SMini6 type package
Features
High transition frequency fT
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DSA2G01 (Individual)
Packaging
DMA506E10R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
–30
–20
–5
–30
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Package
Code
SMini6-F3-B
Pin Name
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
Marking Symbol: C9
Internal Connection
(C1) (B1) (C2)
6 54
Tr2
Tr1
12 3
(E1) (E2) (B2)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
(Common emitter)
VBE
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
Cre
VCE = –10 V, IC = –1 mA
VCB = –10 V, IE = 0
VCE = –20 V, IB = 0
VEB = –5 V, IC = 0
VCE = –10 V, IC = –1 mA
IC = –10 mA, IB = –1 mA
VCE = –10 V, IC = –1 mA
VCE = –10 V, IC = –1 mA, f = 10.7 MHz
70
150
– 0.7
– 0.1
–100
–10
220
– 0.1
300
1.0
Noise figure
NF VCE = –10 V, IC = –1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Zrb VCE = –10 V, IC = –1 mA, f = 2 MHz
22
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Unit
V
µA
µA
µA
V
MHz
pF
dB
W
Publication date: February 2012
Ver. BED
1


Panasonic Electronic Components Datasheet

DMA206E1 Datasheet

Silicon PNP epitaxial planar type Transistor

No Preview Available !

DMA506E1
DMA506E1_PT-Ta
PT Ta
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DMA506E1_VCEsat-IC
VCE(sat) IC
10
IC / IB = 10
1
101
Ta = 85°C
25°C
30°C
102
101
1
10 102
Collector current IC (mA)
DMA506E1_fT-IC
fT IC
350
VCE = 10 V
300 Ta = 25°C
250
200
150
100
50
0
101
1
10 102
Collector current IC (mA)
DMA506E1_IC-VCE
IC VCE
50
Ta = 25°C
40
30
IB = −500 µA 450 µA 400 µA
350 µA
300 µA
250 µA
20 200 µA
150 µA
100 µA
10
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
DMA506E1_IC-VBE
IC VBE
40
VCE = 10 V
25°C
30
Ta = 85°C
30°C
20
10
0
0
0.4
0.8
1.2
Base-emitter voltage VBE (V)
DMA506E1_hFE-IC
hFE IC
250
VCE = −10 V
200 Ta = 85°C
150
25°C
100 30°C
50
0
−1 −10 102
Collector current IC (mA)
DMA506E1_Cob-VCB
Cob VCB
IE = 0
4.0 f =1 MHz
Ta = 25°C
3.0
2.0
1.0
0
1 10 102
Collector-base voltage VCB (V)
2 Ver. BED


Part Number DMA206E1
Description Silicon PNP epitaxial planar type Transistor
Maker Panasonic Semiconductor
Total Page 4 Pages
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