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DMA2610F Datasheet

Silicon PNP epitaxial planar type Transistor

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This product complies with the RoHS Directive (EU 2002/95/EC).
DMA2610F
Silicon PNP epitaxial planar type
For digital circuits
Features
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DRA2143X (Common emitter)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
Package
Code
Mini5-G3-B
Pin Name
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Marking Symbol: R3
Internal Connection
(C1) (C2)
54
Tr1
R2
R1
Tr2
R2
R1
123
(B1) (E) (B2)
Resistance value
R1 4.7 kΩ
R2 10 kΩ
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = –10 µA, IE = 0
–50
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–50
Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0
– 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0
– 0.5
Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0
–1.0
Forward current transfer ratio
hFE VCE = –10 V, IC = –5 mA
30
hFE ratio *
hFE
(Small/Large)
VCE = –10 V, IC = –5 mA
0.50 0.99
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = – 0.5 mA
– 0.25
Input voltage (ON)
VI(on) VCE = – 0.2 V, IC = –5 mA
–1.7
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
– 0.6
Input resistance
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Resistance ratio
R1
R1 / R2
–30% 4.7 +30%
0.37 0.47 0.57
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Publication date: January 2010
ZJJ00543BED
1


Panasonic Electronic Components Datasheet

DMA2610F Datasheet

Silicon PNP epitaxial planar type Transistor

No Preview Available !

DMA2610F
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA2610F_PT-Ta
PT Ta
350
300
250
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DMA2610F_VCEsat-IC
VCE(sat) IC
10
IC / IB = 20
DMA2610F_IC-VCE
IC VCE
120
Ta = 25°C
100
IB = −800 µA
700 µA
80 600 µA
500 µA
60 400 µA
40 300 µA
200 µA
20
100 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
DMA2610F_IO-VIN
IO VIN
10 VO = 5 V
DMA2610F_hFE-IC
hFE IC
300
VCE = −10 V
250
200 Ta = 85°C
150 25°C
100 30°C
50
0
0.1
1
10 100
Collector current IC (mA)
DMA2610F_VIN-IO
VIN IO
100
VO = − 0.2 V
1
0.1 Ta = 85°C
30°C
25°C
0.01
0.1
1
10 −100
Collector current IC (mA)
1 Ta = 85°C
101
25°C
102
30°C
1030
0.5
1.0
Input voltage VIN (V)
1.5
10
25°C
Ta = −30°C
1 85°C
0.1
0.1
1
10 100
Output current IO (mA)
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2
ZJJ00543BED


Part Number DMA2610F
Description Silicon PNP epitaxial planar type Transistor
Maker Panasonic Semiconductor
Total Page 4 Pages
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