Datasheet4U Logo Datasheet4U.com

K2375 - 2SK2375

Features

  • q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s.

📥 Download Datasheet

Datasheet preview – K2375

Datasheet Details

Part number K2375
Manufacturer Panasonic
File Size 36.70 KB
Description 2SK2375
Datasheet download datasheet K2375 Datasheet
Additional preview pages of the K2375 datasheet.

📁 Similar Datasheet

  • K2370 - 2SK2370 (NEC)
  • K2371 - 2SK2371 (NEC)
  • K2372 - 2SK2372 (NEC)
  • K2377 - Silicon N-Channel Power F-MOS (Panasonic)
  • K2312 - 2SK2312 (Toshiba Semiconductor)
  • K2312 - N-Channel 60V MOSFET (VBsemi)
  • K2313 - 2SK2313 (Toshiba Semiconductor)
  • K2313 - 2SK2313 (Toshiba Semiconductor)
  • K2314 - N-Channel 100-V MOSFET (VBsemi)
  • K2324 - 2SK2324 (Panasonic)
Other Datasheets by Panasonic Semiconductor

    Full PDF Text Transcription

    Click to expand full text
    Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −55 to +150 Unit V V 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.
    Published: |