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Panasonic Electronic Components Datasheet

K2538 Datasheet

2SK2538

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Power F-MOS FETs
2SK2538
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q High-speed switching
q No secondary breakdown
s Applications
q High-speed switching (switching mode regulator)
q For high-frequency power amplification
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
dissipation
TC= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
EAS *
PD
Tch
Tstg
Rating
250
±30
±2
±4
10
30
2
150
–55 to +150
* L= 5mH, IL= 2A, VDD= 30V, 1 pulse
Unit
V
V
A
A
mJ
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Condition
VDS= 200V, VGS= 0
VGS=±30V, VDS= 0
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID=1A
VDS= 25V, ID=1A
IDR= 2A, VGS= 0
VDS=10V, VGS= 0, f=1MHz
VDD= 200V, ID= 2A
VGS=10V, RL=100
2SK2538
10.0±0.2
5.5±0.2
Unit : mm
4.2±0.2
2.7±0.2
ø3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
-0.1
2.54±0.25
5.08±0.5
123
1 : Gate
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
Min Typ Max Unit
100 µ A
±1 µ A
250 V
1 5V
1.2 2
0.5 1
S
–1.6 V
220 pF
60 pF
20 pF
10 ns
20 ns
45 ns
90 ns
4.17 ˚C/W
62.5 ˚C/W


Panasonic Electronic Components Datasheet

K2538 Datasheet

2SK2538

No Preview Available !

Power F-MOS FETs
2SK2538
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
IDP
3 ID
1
0.3
0.1
t=1ms
t=10ms
t=100ms
DC
0.03
0.01
1
3 10 30 100 300 1000
Drain-Source voltage VDS (V)
ID – VDS
5
TC=25˚C
VGS=10.0V
9.0V
4
8.0V
7.0V
3
6.5V
30W
2 6.0V
5.5V
1 5.0V
0
0 4 8 12 16 20
Drain voltage VDS (V)
| Yfs | – ID
3
VDS=25V
TC=25˚C
2
1
0
012345
Drain current ID (A)
40
(1)
30
PD – Ta
(1) TC=Ta
(2) Without heat sink
(PD=2.0W)
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID – VGS
5
VDS=10V
TC=25˚C
4
3
2
1
0
0 2 4 6 8 10
Gate-Source voltage VGS (V)
Ciss, Coss, Crss – VDS
1000
f=1MHz
TC=25˚C
300 Ciss
100
30
Coss
10 Crss
3
1
0 50 100 150 200 250
Drain-Source voltage VDS (V)
EAS – Tj
12
VDD=30V
ID=2A
10
8
6
4
2
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
RDS(on) – ID
5
VGS=10V
4
3
TC=100˚C
2
25˚C
1
0˚C
0
012345
Drain current ID (A)
td(on), tr, tf, td(off) – ID
120
VDD=200V
VGS=10V
TC=25˚C
100
td(off)
80
60
tf
40
tr
20
td(on)
0
012345
Drain current ID (A)


Part Number K2538
Description 2SK2538
Maker Panasonic Semiconductor
Total Page 3 Pages
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