Datasheet4U Logo Datasheet4U.com

LN52 - GaAs Infrared Light Emitting Diode

Features

  • High-power output, high-efficiency : PO = 6 mW (typ. ) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2.
  • 0.1 ø4.2 +0.1.
  • 0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1.
  • 1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power diss.

📥 Download Datasheet

Datasheet preview – LN52

Datasheet Details

Part number LN52
Manufacturer Panasonic Semiconductor
File Size 44.78 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN52 Datasheet
Additional preview pages of the LN52 datasheet.

📁 Similar Datasheet

  • LN5001 - High Ripple-Rejection Low Dropout Low Input-And-Output Capacitance CMOS Voltage Regulator (natlinear)
  • LN5012 - Low Power High Input Voltage CMOS Voltage Regulator (natlinear)
  • LN5024 - 16-bit constant current LED sink driver (natlinear)
  • LN5026 - 16-bit constant current LED sink driver (natlinear)
  • LN5030 - Low Power High Input Voltage CMOS Voltage Regulator (natlinear)
  • LN5033 - Low Power High Input Voltage CMOS Voltage Regulator (natlinear)
  • LN5036 - Low Power High Input Voltage CMOS Voltage Regulator (natlinear)
  • LN5044 - Low Power High Input Voltage CMOS Voltage Regulator (natlinear)
  • LN5050 - Low Power High Input Voltage CMOS Voltage Regulator (natlinear)
  • LN5052 - High Speed Low Dropout Middle Current Voltage Regulators (natlinear)
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1 – 1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2.54±0.
Published: |