LNJ808K8SRA
Light Emitting Diodes
This product plies with the Ro HS Directive (EU 2002/95/EC).
Forward current IF (m A) (planed maint Meaniantnec Rneelata Ftnyoircpveewe/,alru Didmmsciaciunronortunetesintinnna Itu Fenencd(seiitmtnyy Ac)l(pue%,d)eplsafnolleodwdiinsgc foontiurnu Preoddtyucptelidf,edciysccloentsitnaugee.d Dis Mcaionnttiennuaendtype)ce/
Surface Mounting Chip LED
SS Type
- Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Power dissipation
Forward current
Pulse forward current
- IFP
Reverse voltage
Operating ambient temperature
Topr
Storage temperature
Tstg
Note)
- : The condition of IFP is duty 10%, Pulse width 1 msec.
50 20 100 3
- 25 to +85
- 40 to +100
Unit m W m A m A V °C °C
- Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Luminous intensity Reverse current Forward voltage Peak emission wavelength Spectral half band width
IO IF = 10 m A IR VR = 3 V VF IF = 10 m A λP IF = 10 m A Δλ IF = 10 m A
IO ...
