1
Publication date: August 2001
SKH00029AED
1
MA2SD25
IF V F
103 Ta = 125°C 102 104 75°C 25°C.
20°C 105
IR V R
40 35
Ct VR
Ta = 25°C
Forward current IF (mA)
Reverse current IR (µA)
Ta = 125°C 103 75°C 10
2
Terminal capacitance Ct (pF)
20
30 25 20 15 10 5
10
1
25°C 10
10.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diodes (SBD)
MA2SD25
Silicon epitaxial planar type
Unit: mm
For super high speed switching
0.80+0.05 –0.03
0.80±0.05
0.60+0.05 –0.03 0.12+0.05 –0.02
(0.80)
(0.60)
0.01±0.01
5°
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 −55 to +125 Unit V
5°
2 0.30±0.05
0+0 –0.05
0.01±0.
MA2SD25 Datasheet
