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MA6J784 - Silicon epitaxial planar type

Features

  • s.
  • IF(AV) = 100 mA rectification is possible.
  • Optimum for high frequency rectification because of its short reverse recovery time (trr).
  • Low forward voltage VF and good rectification efficiency 1 2 3 0.2±0.05 5˚ 2.0±0.1 (0.65)(0.65) 6 5 4 Unit: mm 0.7±0.1 1.25±0.1 2.1±0.1 5˚ 0.16+0.10.
  • 0.06 0 to 0.1 (0.425).
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Average forward current.
  • 2 Peak forward curren.

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Datasheet Details

Part number MA6J784
Manufacturer Panasonic
File Size 96.63 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA6J784 Datasheet

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www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA6J784 Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF and good rectification efficiency 1 2 3 0.2±0.05 5˚ 2.0±0.1 (0.65)(0.65) 6 5 4 Unit: mm 0.7±0.1 1.25±0.1 2.1±0.1 5˚ 0.16+0.10 –0.06 0 to 0.1 (0.
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