Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation.
Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating.
50.
50.
80 50 50 80 125 125.
55 to +125 Unit V V mA V V mA mW °C °C
1: Base (Tr1) 2: Base (Tr2) 3: Emitter.
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Transistors with built-in Resistor
NP0G3D2
Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2)
Unit: mm
For digital circuits
0.12+0.03 -0.02 6 5 4
0.80±0.05
(0.35) (0.35) 1.00±0.05
■ Basic Part Number of Element
• UNR31AT × UNR32AL
Display at No.1 lead
0.10
• Two elements incorporated into one package • Suitable for high density package and downsizing of the equipment • Automatic insertion with the taping is possible
1.00±0.05
■ Features
0 to 0.02
1
2
3
0.
NP0G3D2 Datasheet
