Datasheet4U.com

OH10010 - GaAs Hall Device

Panasonic Semiconductor

📥 Download Datasheet

OH10010 Datasheet Preview — Preview of OH10010 PDF

datasheet Preview Page 2

Datasheet Details

Part number	OH10010
Manufacturer	Panasonic ↗ Semiconductor
File Size	45.76 KB
Description	GaAs Hall Device
Datasheet	OH10010_PanasonicSemiconductor.pdf

OH10010 Product details

Features

Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T).
Input resistance: typ. 0.75 kΩ.
Satisfactory linearity of GaAs hall voltage with respect to the magnetic field.
Small temperature coefficient of the hall voltage: β ≤.
0.06%/°C.
Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 0.65 ± 0.15 4 Unit : mm 2.8.
0.3 + 0.2 1.5 ± 0.2 1 0.5 R 0.65 ± 0.15 0.4.
0.05 (0.5.

📁 OH10010 Similar Datasheet

OH12A - Hall Effect Element (OUZHUO)
OH12AF-L - Hall Effect Element (OUZHUO)
OH12B - Hall Effect Element (OUZHUO)
OH13 - Hall Latch (OUZHUO)
OH137 - Unipolar Hall-Effect Switch (Nanjing Ouzhuo Technology)
OH137A0 - Bipolar Hall Switch (OUZHUO)
OH14A - Hall Effect Element (OUZHUO)
OH17 - Bipolar Hall Switch (OUZHUO)

Other Datasheets by Panasonic Semiconductor

OH10003 - GaAs Hall Device
OH10004 - GaAs Hall Device
OH10008 - GaAs Hall Device
OH10009 - GaAs Hall Device

Published: May 13, 2005 |