OH10010 Description
GaAs Hall Devices OH10010 GaAs Hall Device Magnetic sensor.
OH10010 Key Features
- Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
- Input resistance: typ. 0.75 kΩ
- Satisfactory linearity of GaAs hall voltage with respect to the magnetic field
- Small temperature coefficient of the hall voltage: β ≤
- 0.06%/°C
- Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package