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PN155 - Silicon NPN Phototransistor

Key Features

  • High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current 12.8 min. 3.9±0.25 4.5±0.15 3.5±0.15 Flat type plastic package (2.95) 2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 100.
  • 25 to +85.
  • 30 to +.

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Datasheet Details

Part number PN155
Manufacturer Panasonic
File Size 81.96 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PN155 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Phototransistors PNZ155 (PN155) Silicon NPN Phototransistor Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 2.1±0.15 1.6±0.15 0.8±0.1 Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current 12.8 min. 3.9±0.25 4.5±0.15 3.5±0.15 Flat type plastic package (2.95) 2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.