PNZ312D Datasheet | Panasonic

Features Fast response : tr, tf = 10 ns (typ.) 13.5±1.0 4.0±0.1 1.0±0.3 1.0±0.1 ø3.2 Dep. 0.1(typ.) 10˚ 5.0±0.1 2.54±0.1 4 3 1.8±0.3 1.0±0.2 Unit : mm Good photo current linearity Low dark current : ID = 20 n A (max.) Small size plastic package (flat type) Adoption of visible light cutoff resin 4-0.6 +0.1 - 0.2 4-0.5±0.1 1 10˚ 2 10˚ 10˚ 0.2 +0.1 - 0.05 Auto focus sensor for still cameras and video cameras etc. Distance measuring systems Position sensor for automatic assembly lines Eye sensor for industrial robots 5˚ 5˚ Applications 1: Anode A 2: mon Cathode 3: Anode B 4: mon Cathode Note) The PNZ312D package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 30 - 25 to +85 - 30 to +100 Unit V m W ˚C ˚C Dimensions of detection area 3.5 1.6 1.6 0.04 Unit : mm 1.35 1.0 Electro-Optical Characteristics (Ta = 25˚C) Parameter Reverse voltage (DC) Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Acceptance half angle Symbol VR ID IL- 3 λP tr, tf- 2 Ct θ IR = 10µA VR = 10V VR = 10V, L = 1000 lx- 1 VR = 10V VR = 10V, RL = 1kΩ VR = 10V, f = 1MHz Measured from the optical axis to the half power point 8 12 940 10 5 65 Conditions min 30 20 typ max Unit V n A µA nm ns p F deg. Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values corresponding to individual elements. - 1 Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source. - 2 Semiconductor laser light source ( λ = 800 nm ) - 3 Photo current measurement...