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Panasonic Electronic Components Datasheet

UN421F Datasheet

Silicon NPN epitaxial planer transistor

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Transistors with built-in Resistor
UN4211/4212/4213/4214/4215/4216/4217/4218/
4219/4210/421D/421E/421F/421K/421L
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q New S type package, allowing supply with the radial taping.
4.0±0.2
Unit: mm
s Resistance by Part Number
q UN4211
q UN4212
q UN4213
q UN4214
q UN4215
q UN4216
q UN4217
q UN4218
q UN4219
q UN4210
q UN421D
q UN421E
q UN421F
q UN421K
q UN421L
(R1)
10k
22k
47k
10k
10k
4.7k
22k
0.51k
1k
47k
47k
47k
4.7k
10k
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
4.7k
4.7k
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Internal Connection
R1
B
R2
C
E
1


Panasonic Electronic Components Datasheet

UN421F Datasheet

Silicon NPN epitaxial planer transistor

No Preview Available !

UN4211/4212/4213/4214/4215/4216/4217/
Transistors with built-in Resistor 4218/4219/4210/421D/421E/421F/421K/421L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN4211
ICBO
ICEO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
UN4212/4214/421E/421D
Emitter
cutoff
current
UN4213
UN4215/4216/4217/4210
UN421F/421K
UN4219
IEBO
VEB = 6V, IC = 0
UN4218/421L
Collector to base voltage
Collector to emitter voltage
UN4211
VCBO
VCEO
IC = 10µA, IE = 0
IC = 2mA, IB = 0
50
50
35
Forward
current
transfer
ratio
UN4212/421E
UN4213/4214
hFE
UN4215*/4216*/4217*/4210*
UN421F/421D/4219
VCE = 10V, IC = 5mA
60
80
160
30
UN4218/421K/421L
20
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
VCE(sat)
VOH
UN4213/421K
UN421D VOL
UN421E
Transition frequency
fT
UN4211/4214/4215/421K
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCC = 5V, VB = 3.5V, RL = 1k
VCC = 5V, VB = 10V, RL = 1k
VCC = 5V, VB = 6V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
4.9
UN4212/4217
Input
resis-
tance
UN4213/421D/421E/4210
UN4216/421F/421L
UN4218
R1
(–30%)
UN4219
UN4211/4212/4213/421L
0.8
UN4214
0.17
Resis-
tance
ratio
UN4218/4219
UN421D
UN421E
R1/R2
0.08
3.7
1.7
UN421F
0.37
UN421K
1.7
typ max Unit
0.1 µA
0.5 µA
0.5
0.2
0.1
0.01 mA
1.0
1.5
2.0
V
V
460
0.25 V
V
0.2
0.2
V
0.2
0.2
150 MHz
10
22
47
(+30%) k
4.7
0.51
1
1.0 1.2
0.21 0.25
0.1 0.12
4.7 5.7
2.14 2.6
0.47 0.57
2.13 2.6
* hFE rank classification (UN4215/4216/4217/4210)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2


Part Number UN421F
Description Silicon NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 13 Pages
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