Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
SMini type package allowing easy automatic insertion through tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation Junction temperature Storage temperature
PT
150
mW
Tj
150
°C
Tstg.
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Transistors with built-in Resistor
UNR521W
Silicon NPN epitaxial planar type
For digital circuits
Features Costs can be reduced through downsizing of the equipment and reduction of
the number of parts SMini type package allowing easy automatic insertion through tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation Junction temperature Storage temperature
PT
150
mW
Tj
150
°C
Tstg –55 to +150 °C
0.3+–00..01 3
(0.425)
Unit: mm
0.15+–00..0150
1.25±0.10 2.1±0.1 5°
0.2±0.1
1
2
(0.65) (0.65) 1.3±0.1 2.0±0.2
10°
0 to 0.1 0.9±0.1 0.9–+00..
UNR521W Datasheet
