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XN01215 Datasheet Silicon NPN epitaxial planer transistor

Manufacturer: Panasonic

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Datasheet Details

Part number XN01215
Manufacturer Panasonic
File Size 161.88 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN01215 Datasheet

Overview

www.DataSheet4U.com Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1215 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 9M Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz –30% 150 10 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz kΩ min 50 50 0.1 0.5 0.01 460 typ max Unit V V µA µA mA Ratio between 2 elements +0.1 1.45±0.

Key Features

  • 1 DataSheet 4 U . com www. DataSheet4U. com Composite Transistors PT.
  • Ta 500 XN1215 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 160 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE.
  • IC 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 250 200 25˚C 150 100 50 0.
  • 25˚C Ta=7.

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