Overview: posite Transistors XP03312
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm For switching/digital circuits
0.425 2.1±0.1 1.25±0.1 0.425 0.65 q q 0.9± 0.1 q UN1212+UN1112
1 : Emitter(Tr1) 2 : Base(Tr1) 3 : Emitter(Tr2) s Absolute Maximum Ratings
Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C)
Ratings 50 50 100 –50 –50 –100 150 150 –55 to +150 Unit V V mA V V mA mW ˚C ˚C Marking Symbol: 4P Internal Connection
1 2 3 4 Tr1 5 0 to 0.1 s Basic Part Number of Element 0.7±0.1 0.12 – 0.02 +0.05 Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) Reduction of the mounting area and assembly cost by one half. 2.0±0.
