• Part: PE42430
  • Manufacturer: pSemi
  • Size: 0.97 MB
Download PE42430 Datasheet PDF
PE42430 page 2
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PE42430 Key Features

  •  HaRP™-enhanced UltraCMOS® device - Low insertion loss
  •  Typical 0.45 dB @ 1 GHz - Typical 0.55 dB @ 2.5 GHz
  •  IIP3: Typical +66 dBm - P0.1dB pression: Typical +30 dBm - Excellent ESD tolerance of 4500V HBM
  •  No external VDD required. VDD is derived
  •  Package type: 8-lead 1.5 x 1.5 mm DFN

PE42430 Description

The PE42430 is a HaRP™-enhanced reflective SP3T RF switch developed on the UltraCMOS® process technology. This tiny general purpose switch is ideal for WLAN and bluetooth applications in the 2.4 - 2.5 GHz bands as well as general broadband switching applications. It is prised of three RF ports and has low insertion loss and high isolation.

PE42430 Applications

  • 2.5 GHz bands as well as general broadband switching applications. It is prised of three RF ports and has low insertion loss and high isolation. An on-chip CMOS