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Peregrine Semiconductor

PE4246 Datasheet Preview

PE4246 Datasheet

Absorptive SPST UltraCMOS RF Switch

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Product Description
The PE4246 RF Switch is designed to cover a broad range of
applications from 1 to 5000 MHz. It is non-reflective at both
RF1 and RF2 ports. This SPST switch integrates a single-pin
CMOS control interface, and provides low insertion loss while
operating with extremely low bias from a single +3-volt supply.
In a typical application, the high isolation PE4246 can replace
multiple RF switches of lesser isolation performance. It is
offered in a small 3x3 mm DFN package.
The PE4246 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
Peregrine Specification 71/0008
RF1
ESD
RF2
ESD
Product Specification
PE4246
Absorptive SPST UltraCMOS™
RF Switch: 1 - 5000 MHz
Features
 Non-reflective 50-ohm RF switch
 50-ohm (0.25 watt) terminations
 High isolation: 55 dB at 1000 MHz,
48 dB at 3000 MHz
 Low insertion loss: 0.8 dB at 1000 MHz,
0.9 dB at 3000 MHz
 High linearity: +33 dBm input 1dB
compression point
 CMOS/TTL single-pin control
 Single +3-volt supply operation
 Extremely low bias: 33 μA @ 3 V
 Available in a 6-lead DFN package
Figure 2. Package Type
6-lead DFN
50CMOS 50
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 )
Parameter
Condition
Minimum
Typical
Maximum
Units
Operation Frequency1
1
5000
MHz
Operating Power
CTRL=1/CTRL=0
30/24
dBm
Insertion Loss
1-2000 MHz
2000-3000 MHz
3000-4000 MHz
4000-5000 MHz
0.8 1.0 dB
0.9 1.1 dB
1.0 1.3 dB
1.3 1.8 dB
Isolation
1-2000 MHz
2000-3000 MHz
3000-4000 MHz
4000-5000 MHz
49
45
43
40
55
48
46
44
dB
dB
dB
dB
Return Loss
Input 1 dB Compression3
1-5000 MHz
1-5000 MHz
11 20
30 33
dB
dBm
Input IP3
1-5000 MHz
50
dBm
Video Feedthrough2
15 mVpp
Switching Time
2 μs
Notes: 1. Device linearity will begin to degrade below 1 MHz.
2. The DC transient at the output of the switch when the control voltage is switched from Low to High or High to Low in a 50 test set-up,
measured with 1ns risetime pulses and 500 MHz bandwidth.
3. Note Absolute Maximum ratings in Table 3.
Document No. 70-0090-09 www.psemi.com
©2003-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8
Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. patents: http://patents.psemi.com




Peregrine Semiconductor

PE4246 Datasheet Preview

PE4246 Datasheet

Absorptive SPST UltraCMOS RF Switch

No Preview Available !

PE4246
Product Specification
Figure 3. Pin Configuration
VDD 1
GND 2
RF1 3
Exposed
Solder Pad
(bottom side)
6 RF2
5 GND
4 CTRL
Table 2. Pin Descriptions
Pin Pin
No. Name
Description
1 VDD Nominal 3 V supply connection.1
2 GND Ground connection. 3
3 RF1 RF port. 2
CMOS or TTL logic level:
4 CTRL
High = RF1 to RF2 signal path
Low = RF1 isolated from RF2
5 GND Ground connection. 3
6 RF2 RF port. 2
Notes: 1. A bypass capacitor should be placed as close as possible
to the pin.
2. Both RF pins must be DC blocked by an external capacitor
or held at 0 VDC.
3. The exposed pad must be soldered to the ground plane for
proper switch performance.
Table 3. Absolute Maximum Ratings
Symbol Parameter/Condition Min Max
VDD Power supply voltage
-0.3 4.0
VI Voltage on CTRL input
-0.3 5.5
TST
PIN
VESD
Storage temperature
Input power (50 ),
CTRL=1/CTRL=0
ESD voltage
(Human Body Model)
-65 150
33/24
200
Unit
V
V
°C
dBm
V
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE4246 in
the 6-lead 3x3 DFN package is MSL1.
Device Description
The PE4246 high-isolation SPST RF Switch is
designed to support a variety of applications
where high isolation performance is demanded
and a non-reflective input and output is desired.
This switch is able to replace multiple lesser
performing switches in a very small 3x3 mm DFN
footprint.
Table 4. Operating Ranges
Parameter
Min
VDD Power Supply
2.7
IDD Power Supply Current
(VDD = 3 V, VCNTL = 3 V)
TOP Operating temperature
-40
Control Voltage High
0.7xVDD
Control Voltage Low
0
Typ Max Unit
3.0 3.3
V
33 40 μA
85
5
0.3xVDD
°C
V
V
Table 5. Control Logic Truth Table
Control Voltage
CTRL = CMOS or TTL High
CTRL = CMOS or TTL Low
Signal Path
RF1 to RF2
RF1 isolated from RF2
Control Logic
The control logic input pin (CTRL) is typically driven by
a 3-volt CMOS logic level signal, and has a threshold of
50% of VDD. For flexibility to support systems that have
5-volt control logic drivers, the control logic input has
been designed to handle a 5-volt logic HIGH signal. (A
minimal current will be sourced out of the VDD pin when
the control logic input voltage level exceeds VDD.)
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe the
same precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified in Table 3.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™ de-
vices are immune to latch-up.
©2003-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 8
Document No. 70-0090-09 UltraCMOS™ RFIC Solutions
Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. patents: http://patents.psemi.com


Part Number PE4246
Description Absorptive SPST UltraCMOS RF Switch
Maker Peregrine Semiconductor
Total Page 8 Pages
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