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Peregrine Semiconductor

PE42524 Datasheet Preview

PE42524 Datasheet

SPDT RF Switch

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PE42524
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 10 MHz–40 GHz
Features
• Wideband support up to 40 GHz
• High port to port isolation
48 dB @ 26.5 GHz
39 dB @ 35 GHz
33 dB @ 40 GHz
• Excellent linearity performance
P1dB of 31.5 dBm @ 26.5 GHz
P1dB of 28.0 dBm @ 35 GHz
IIP3 of 50 dBm @ 13.5 GHz
• Fast RF Trise/Tfall time of 55 ns
• Low insertion loss
1.8 dB @ 26.5 GHz
3.1 dB @ 35 GHz
• Flip-chip die
Applications
• Test and measurement
• Microwave backhaul
• Radar
• Military communications
Figure 1 • PE42524 Functional Diagram
RFC
RF1
ESD
V1 V2
RF2
Product Description
The PE42524 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency
range from 10 MHz to 40 GHz. This wideband flip-chip switch delivers high isolation performance, excellent
linearity and low insertion loss, making this device ideal for test and measurement (T&M), microwave backhaul,
radar and military communications (mil-comm) applications. At 30 GHz, the PE42524 exhibits 17 dB active port
return loss, 47 dB isolation and 2.2 dB insertion loss. No blocking capacitors are required if DC voltage is not
present on the RF ports.
The PE42524 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-48614-4 – (12/2015)




Peregrine Semiconductor

PE42524 Datasheet Preview

PE42524 Datasheet

SPDT RF Switch

No Preview Available !

PE42524
SPDT RF Switch
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42524
Parameter/Condition
Control voltage (V1, V2)
RF input power (RFC–RFX, 50Ω)
Storage temperature range
ESD voltage HBM, all pins(*)
Note: * Human body model (MIL-STD883 Method 3015).
Min
–3.5
–65
Max
3.5
Fig. 2
+150
2000
Unit
V
dBm
°C
V
Page 2
www.psemi.com
DOC-48614-4 – (12/2015)


Part Number PE42524
Description SPDT RF Switch
Maker Peregrine Semiconductor
Total Page 16 Pages
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