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PerkinElmer Optoelectronics

C30642 Datasheet Preview

C30642 Datasheet

(C306xx) Large-Area InGaAs Photodiodes

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Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
• 0.5, 1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times
Applications
• Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
• F.T.I.R. spectroscopy
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PerkinElmer Optoelectronics

C30642 Datasheet Preview

C30642 Datasheet

(C306xx) Large-Area InGaAs Photodiodes

No Preview Available !

C30619, C30641, C30642, C30665
Package Options
TE-Cooled Devices: Large-area detectors are available
mounted on a 1-stage or 2-stage thermoelectric (TE) cooler.
Cooling increases shunt resistance (see Figure 2) thereby
reducing noise for increased sensitivity. Typical detector
temperature is -10°C with a 1-stage TE cooler or -35°C
using a 2-stage cooler. A TE-cooler option can be specified
by adding the extension -TC (1-stage cooler) or -DTC (2-
stage cooler) to the standard part number (see ordering
guide). More information is available from the "TC-Series
Cooled Photodiodes" datasheet from PerkinElmer
Optoelectronics Canada.
Detector and Pre-Amplifier: Large-area InGaAs detectors are
also available integrated with a preamplifier and TE-cooler. The
HTE-series features large-area InGaAs detectors with a high
gain hybrid transimpedence amplifier mounted on a 2-stage TE
cooler. TE-cooling maximizes sensitivity and stabilizes op-amp
offset and output characteristics. This provides an easy-to-use
high sensitivity detector platform optimized for good temperature
stability over a wide operating temperature range. More
information is available from the HTE-series datasheet. The
standard HTE-2642 incorporates a C30642E chip.
Specifications (at VR = VOP (typical), 22°C)
Parameter
C30619
Min Typ Max
Active Diameter
Responsivity At 850 nm
0.10
At 1300 nm
0.80
At 1550 nm
0.85
Shunt Resistance (VR = 10 mV) 1
Dark Current
10
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance At VR = 0V
At VR = VOP
Bandwidth (-3 dB, RL = 50Ω)
Linearity 2
Available package types
0.5
0.20
0.90
0.95
250
1
0.02
20
8
350
> +13
D2, D14
20
0.10
25
10
C30641
Min Typ Max
1.0
0.10 0.20
0.80 0.90
0.85 0.95
5 50
5 50
0.04 0.15
100 125
40 50
75
> +13
D2, D14
Units
mm
A/W
A/W
A/W
MΩ
nA
pA/√Hz
pF
pF
MHz
dBm
-
Operating Ratings
Parameter
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
C30619
Min Typ Max
0 5 10
20 80
10
100
100
-60 125
-40 85
C30641
Min Typ Max
025
20 80
10
100
100
-80 125
-40 85
Units
V
V
mA
mA
mW
°C
°C
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).


Part Number C30642
Description (C306xx) Large-Area InGaAs Photodiodes
Maker PerkinElmer Optoelectronics
Total Page 5 Pages
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