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C30642 - (C306xx) Large-Area InGaAs Photodiodes

Download the C30642 datasheet PDF. This datasheet also covers the C30619 variant, as both devices belong to the same (c306xx) large-area ingaas photodiodes family and are provided as variant models within a single manufacturer datasheet.

Description

The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrumentation.

Features

  • 0.5, 1.0, 2.0, and 3.0 mm diameters.
  • High responsivity from 850 nm to 1550 nm.
  • High shunt resistance, low dark current.
  • TE-cooled package options.
  • Low capacitance for fast response times.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C30619_PerkinElmerOptoelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C30642
Manufacturer PerkinElmer Optoelectronics
File Size 175.28 KB
Description (C306xx) Large-Area InGaAs Photodiodes
Datasheet download datasheet C30642 Datasheet

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Other Datasheets by PerkinElmer Optoelectronics

Part Number Description
C30641 (C306xx) Large-Area InGaAs Photodiodes
C30619 (C306xx) Large-Area InGaAs Photodiodes
C30665 (C306xx) Large-Area InGaAs Photodiodes
C30807 (C30807 - C30831) N-Type Silicon PIN Photodetectors
C30808 (C30807 - C30831) N-Type Silicon PIN Photodetectors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrumentation. All devices are planar passivated and feature low capacitance for extended bandwidth, and high shunt resistance for maximum sensitivity. Typical devices feature <1% non-linearity to optical powers >+13 dBm (20 mW), and uniformity within ±2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large-area InGaAs devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850, 1300, and 1550 nm. Devices are available with active areas from 0.5 mm to 3.
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