Datasheet4U Logo Datasheet4U.com

C30902EH - Silicon Avalanche Photodiodes

Download the C30902EH datasheet PDF. This datasheet also covers the C30902 variant, as both devices belong to the same silicon avalanche photodiodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High quantum efficiency of 77% typical @ 830 nm.
  • C30902SH and C30921SH can be operated in “Geiger” mode.
  • Hermetically sealed package.
  • Low Noise at room temperature.
  • High responsivity.
  • internal avalanche gains in excess of 150.
  • Spectral response range.
  • (10% points) 400 to 1000 nm.
  • Time response.
  • typically 0.5 ns.
  • Wide operating temperature range - -40°C to +70°C.
  • RoHS-compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C30902-PerkinElmerOptoelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C30902EH
Manufacturer PerkinElmer Optoelectronics
File Size 175.76 KB
Description Silicon Avalanche Photodiodes
Datasheet download datasheet C30902EH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATASHEET SENSOR SOLUTIONS Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO-18 package. The useful diameter of the photosensitive surface is 0.5 mm.