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C30921S Datasheet, PerkinElmer Optoelectronics

C30921S Datasheet, PerkinElmer Optoelectronics

C30921S

datasheet Download (Size : 232.32KB)

C30921S Datasheet

C30921S photodiodes

(c309xxx) silicon avalanche photodiodes.

C30921S

datasheet Download (Size : 232.32KB)

C30921S Datasheet

C30921S Features and benefits

C30921S Features and benefits


* High Quantum Efficiency 77% Typical at 830 nm
* C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detecti.

C30921S Application

C30921S Application

requiring high speed and/or high responsivity. Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C30921S High Sp.

C30921S Description

C30921S Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times.

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C30921S Page 1 C30921S Page 2 C30921S Page 3

TAGS

C30921S
C309xxx
Silicon
Avalanche
Photodiodes
PerkinElmer Optoelectronics

Manufacturer


PerkinElmer Optoelectronics

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