VTP1012 Datasheet | PerkinElmer Optoelectronics

DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is mon to the case. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D- CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 50 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 50 V H = 0, V = 10 m V H = 0, V = 15 V 940 nm @ Peak 400 925 140 ±35 8.7 x 10-14 (Typ.) 1.5 x 10 12 (Typ.) .011 .55 1150 .5 6 10 Typ. 17 .20 350 -2.0 7 Max. µA %/°C m V m V/°C n A GΩ p F A/(W/cm2) A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS Perkin Elmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: .perkinelmer./opto...