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BA278 Datasheet Preview

BA278 Datasheet

Band-switching diode

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D739
BA278
Band-switching diode
Preliminary specification
2001 Jan 15




Philips

BA278 Datasheet Preview

BA278 Datasheet

Band-switching diode

No Preview Available !

Philips Semiconductors
Band-switching diode
Preliminary specification
BA278
FEATURES
Small plastic SMD package
Continuous reverse voltage: max. 35 V
Continuous forward current: max. 100 mA
Low diode capacitance: max. 1.2 pF
Low diode forward resistance: max. 0.7 .
APPLICATIONS
Low loss band switching in VHF television tuners.
Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523V SMD package.
PINNING
PIN DESCRIPTION
1
;2
handbook, halfpa1ge 1
cathode
anode
22
Top Tvoiepwview
MAM399
MBK258
Marking code:
Fig.1 Simplified outline (SOD523V)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
Ts = 90 °C
MIN.
65
65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF forward voltage
IR reverse current
Cd diode capacitance
rD diode forward resistance
IF = 10 mA
VR = 25 V
VR = 20 V; Tamb = 75 °C
f = 1 MHz; VR = 6 V; note 1; see Fig.2
IF = 2 mA; f = 100 MHz; note 1; see Fig.3
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX.
1
50
1
1.2
0.7
UNIT
V
nA
µA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
2001 Jan 15
2


Part Number BA278
Description Band-switching diode
Maker Philips
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BA278 Datasheet PDF






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