BFG424F - NPN 25 GHz wideband transistor

Description

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Features

s Very high power gain s Low noise ﬁgure s High transition frequency s Emitter is thermal lead s Low feedback capacitance 1.3.

Philips

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Datasheet Details

Part number	BFG424F
Manufacturer	Philips
File Size	90.08 KB
Description	NPN 25 GHz wideband transistor
Datasheet	BFG424F Datasheet
Additional preview pages of the BFG424F datasheet.

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Full PDF Text Transcription

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BFG424F NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product proﬁle CAUTION 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Very high power gain s Low noise ﬁgure s High transition frequency s Emitter is thermal lead s Low feedback capacitance 1.

Published: Jan 28, 2016 |