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BFG590X Datasheet Preview

BFG590X Datasheet

NPN 5 GHz wideband transistors

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BFG590; BFG590/X
NPN 5 GHz wideband transistors
Rev. 04 — 12 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors




Philips

BFG590X Datasheet Preview

BFG590X Datasheet

NPN 5 GHz wideband transistors

No Preview Available !

NXP Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
BFG590
BFG590/X
CODE
%MH
%MN
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG590
BFG590/X
collector
base
emitter
emitter
collector
emitter
base
emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
|S21|2
insertion power gain
CONDITIONS
open emitter
open base
Ts 60 °C
IC = 35 mA; VCE = 8 V
IC = 0; VCE = 8 V; f = 1 MHz
IC = 80 mA; VCE = 4 V; f = 1 GHz
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
MIN.
50
TYP.
90
0.7
5
13
11
MAX. UNIT
20 V
15 V
200 mA
400 mW
280
pF
GHz
dB
dB
Rev. 04 - 12 November 2007
2 of 11


Part Number BFG590X
Description NPN 5 GHz wideband transistors
Maker Philips
Total Page 11 Pages
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