* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a c
BLV45
Philips
88.33 KB
Vhf power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product speciļ¬cation August 1986 http://www.Datasheet4U.com Philips Semiconductor.
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