* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a c
BLV75-12
Philips
88.28 KB
Vhf power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product speciļ¬cation August 1986 http://www.Datasheet4U.com Philips Semiconductor.
📁 Related Datasheet
BLV75 VHF power transistor (Philips)
BLV7002 N-channel Enhancement Mode Vetical D-MOS Transistor (SHANGHAI BELLING)
BLV730 N-channel Enhancement Mode Power MOSFET (BELLING)
BLV740 N-channel Enhancement Mode Power MOSFET (BELLING)
BLV7N60 N-channel Enhancement Mode Power MOSFET (Estek)
BLV7N60 N-Channel Enhancement Mode Power MOSFET (BELLING)
BLV10 VHF power transistor (NXP)
BLV100 UHF power transistor (NXP)
BLV103 UHF power transistor (NXP)
BLV108 Vertical N-channel MOSFET (SHANGHAI BELLING)
