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Philips

BTH151S-650R Datasheet Preview

BTH151S-650R Datasheet

Thyristor

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Philips Semiconductors
Thyristor
High Repetitive Surge
Product specification
BTH151S-650R
GENERAL DESCRIPTION
Passivated thyristor in a plastic envelope,
suitable for surface mounting, intended for
use in applications requiring high
bidirectional blocking voltage capability and
high thermal cycling performance. This
thyristor has a high repetitive surge
specification which makes it suitable for
applications where high inrush currents or
stall currents are likely to occur on a
repetitive basis.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. UNIT
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
ITRM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Repetitive peak on-state current
650
7.5
12
110
60
V
A
A
A
A
PINNING - SOT428
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
2
13
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM,
VRRM
Repetitive peak off-state
voltages
half sine wave;
-
IT(AV)
IT(RMS)
ITSM
ITRM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current Tmb 103 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
Repetitive peak on-state t = 10ms, τ = 3s, Tmb 45˚C, no.
current
of surges = 100k
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1650
7.5
12
110
121
60
61
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 2001
1
Rev 1.001




Philips

BTH151S-650R Datasheet Preview

BTH151S-650R Datasheet

Thyristor

No Preview Available !

Philips Semiconductors
Thyristor
High Repetitive Surge
Product specification
BTH151S-650R
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
Rth j-mb
Rth j-a
Thermal resistance
junction to mounting base
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
junction to ambient
-
-
TYP.
-
75
MAX. UNIT
1.8 K/W
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT Gate trigger current
IL Latching current
IH Holding current
VT On-state voltage
VGT Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
15
40
20
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
tq
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform;
Gate open circuit
RGK = 100
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100
MIN. TYP. MAX. UNIT
50 130
- V/µs
200 1000 - V/µs
- 2 - µs
- 70 - µs
Ip = 60 A
10ms
3 s (Minimum)
Fig.1. Repetitive surge conditions. IP=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive
cycle T=3 seconds minimum.
March 2001
2
Rev 1.001


Part Number BTH151S-650R
Description Thyristor
Maker Philips
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BTH151S-650R Datasheet PDF






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