MX1011B200Y Overview
Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. Fig.1 Simplified outline and symbol.
Key Features
- Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
- Diffused emitter ballasting resistors improve ruggedness
- Interdigitated emitter-base structure provides high emitter efficiency
- Gold metallization with barrier realizes very stable characteristics and excellent lifetime
- SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange ηC (%)
