MX1011B200Y - Microwave power transistor

Philips Semiconductors (now NXP Semiconductors)

General Description

Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth.

Key Features

Suitable for short and medium pulse.

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MX1011B200Y microwave power transistor by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MX1011B200Y
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	88.46 KB
Description	Microwave power transistor
Datasheet	MX1011B200Y Datasheet

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product speciﬁcation Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Microwave power transistor Product speciﬁcation MX1011B200Y FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing reduces thermal resistance • Internal input and output prematching networks allow an easier design of circuits.