Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
MX1011B200Y Microwave power transistor
Product specification Supersedes data of January 1995
1997 Feb 18
Philips Semiconductors
Microwave power transistor
Product specification
Features
- Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
- Diffused emitter ballasting resistors improve ruggedness
- Interdigitated emitter-base structure provides high emitter efficiency
- Gold metallization with barrier realizes very stable characteristics and excellent lifetime
- Multicell geometry improves power sharing reduces thermal resistance
- Internal input and output prematching networks allow an easier design...