MZ0912B100Y Datasheet | Philips Semiconductors

FEATURES - Interdigitated structure provides high emitter efficiency - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry improves power sharing and low thermal resistance - Input and output matching cell allows an easier design of circuits. APPLICATIONS - mon base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is remended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in mon base configuration and specified in class C. olumns MX0912B100Y; MZ0912B100Y PINNING PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol (SOT439A). handbook, halfpage 1 c b 3 e 2 Top view MAM314 Fig.2 Simplified outline and symbol (SOT443A). QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a mon base class-C broadband amplifier. MODE OF OPERATION Class-C; tp = 10 µs; δ = 10 % f (GHz) 0.960 to 1.215 VCC (V) 50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 20 2 PL (W) >100 GP (d B) >7 ηC (%) >42 Zi; ZL (Ω) see Figs 8 and 9 Philips Semiconductors Product specification NPN microwave power transistors LIMITING VALUES In...