MZ0912B100Y - NPN microwave power transistors

Philips

Datasheet Details

Part number	MZ0912B100Y
Manufacturer	Philips ↗
File Size	98.88 KB
Description	NPN microwave power transistors
Datasheet	MZ0912B100Y_PhilipsSemiconductors.pdf

NPN silicon planar epitaxial microwave power transistors.

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry improves power sharing and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

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Published: May 12, 2005 |