MZ0912B100Y transistors equivalent, npn microwave power transistors.
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS.
* Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTI.
NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package .
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