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Philips
Philips

PDTC114EEF Datasheet Preview

PDTC114EEF Datasheet

NPN resistor-equipped transistor

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PDTC114EEF pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114E series
NPN resistor-equipped transistor;
R1 = 10 k, R2 = 10 k
Product specification
Supersedes data of 2003 Apr 10
2004 Aug 05



Philips
Philips

PDTC114EEF Datasheet Preview

PDTC114EEF Datasheet

NPN resistor-equipped transistor

No Preview Available !

PDTC114EEF pdf
Philips Semiconductors
NPN resistor-equipped transistor;
R1 = 10 k, R2 = 10 k
Product specification
PDTC114E series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO output current (DC)
R1 bias resistor
R2 bias resistor
TYP.
10
10
MAX. UNIT
50 V
100 mA
k
k
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
09
09
04
DS
TC114E
*16(1)
*09(1)
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
2004 Aug 05
2


Part Number PDTC114EEF
Description NPN resistor-equipped transistor
Maker Philips
Total Page 14 Pages
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