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PDTC114EM - NPN Transistor

Download the PDTC114EM datasheet PDF. This datasheet also covers the PDTC114E variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).

Key Features

  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduction of component count.
  • Reduced pick and place costs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PDTC114E-Philips.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2003 Apr 10 2004 Aug 05 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification PDTC114E series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO collector-emitter voltage IO output current (DC) R1 bias resistor R2 bias resistor TYP. − − 10 10 MAX.