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PHP8N50 - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.

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Philips Semiconductors PowerMOS transistor Product specification PHP8N50 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 500 8.8 147 0.
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