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SA3601 Datasheet Low Voltage Dual-band Rf Front-end

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: INTEGRATED CIRCUITS SA3601 Low voltage dual-band RF front-end Preliminary specification 1999 Nov 09 Philips Semiconductors Philips Semiconductors Preliminary specification Low voltage dual-band RF front-end.

General Description

The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2.

The low-band (LB) receiver is a bined low-noise amplifier (LNA) and mixer.

The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of –7 dBm.

Key Features

  • Low current consumption: LB ICC = 14 mA; HB ICC = 15.5 mA.
  • Outstanding low- and high-band noise figure.
  • LNAs with gain control (30 dB gain step).
  • LO input and output buffers.
  • Frequency doubler.
  • On chip logic for network selection and power down.
  • Very small outline package HBLNA_IN GND VCC HBMXR+_IN HBMXR.
  • _IN PD1 VCC GND 1 2 3 4 5 6 7 8 9 PD2 32 31 30 29 28 27 26 25 24 23 22 GND VCC LBMXR_IN GND MXR+_OUT MXR.

More Datasheets from Philips Semiconductors (now NXP Semiconductors)

Part Number Description
SA3600 Low voltage dual-band RF front-end
SA3603 Cellular-band low voltage front-end
SA3604 PCS-band low voltage front-end

SA3601 Distributor