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Polyfet RF Devices

F2001 Datasheet Preview

F2001 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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polyfet rf devices
F2001
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
2.5 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20 Watts
10 oC/W
200 oC
-65 oC to 150oC
0.8 A
70 V
70 V 30V
RF CHARACTERISTICS ( 2.5WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 0.2 A, Vds = 28.0 V, F = 1000 MHz
η Drain Efficiency
45 % Idq = 0.2 A, Vds = 28.0 V, F = 1000 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.2 A, Vds = 28.0 V, F = 1000 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.01 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.2 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.02 A, Vgs = Vds
gM Forward Transconductanc
0.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
3.5
Ohm
Vgs = 20V, Ids = 1A
Idsat
Saturation Curren
1.2
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
9 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
1 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
6 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com




Polyfet RF Devices

F2001 Datasheet Preview

F2001 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

POUT VS PIN GRAPH
F2001
CAPACITANCE VS VOLTAGE
F2001 POUT VS PIN IDQ=0.2A; F=1000 MHZ; VDS=28V
6
5
GAIN
4
3 POUT
2
Efficiency = 35%
1
0
0 0.5 1 1.5 2
PIN IN WATTS
POUT
GAIN
IV CURVE
14
12
10
8
6
4
2
0
2.5
F2A 1 DIE CAPACITANCE VS VDS
100
10 Ciss
Coss
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
2
VGS = 2V
F2A 1 DIE IV CURVE
46
VGS = 4V
8 10 12
VDS IN VOLTS
VGS = 6V
VGS = 8V
14 16
VGS = 10V
18 20
VGS 12V
F2A 1 DIE GM & ID vs VGS
10
1 Id
0.1 Gm
0.01
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F2001
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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F2001 Datasheet PDF





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