900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Polyfet RF Devices

F2212 Datasheet Preview

F2212 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

polyfet rf devices
F2212
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
8 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
40 Watts
4.2 oC/W
200 oC
-65 oC to 150oC
3.2 A
50 V
50 V 30V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gai
10
η Drain Efficiency
50
VSWR Load Mismatch Toleranc
8WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.8 A, Vds = 12.5 V, F = 850 MHz
% Idq = 0.8 A, Vds = 12.5 V, F = 850 MHz
20:1 Relative Idq = 0.8 A, Vds = 12.5 V, F = 850 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
40
V Ids = 0.04 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.8 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.08 A, Vgs = Vds
gM Forward Transconductanc
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.55
Ohm
Vgs = 20V, Ids =6.4 A
Idsat
Saturation Curren
9.2
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
30 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
4.8
pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
32 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com




Polyfet RF Devices

F2212 Datasheet Preview

F2212 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

POUT VS PIN GRAPH
F2212
100
10
CAPACITANCE VS VOLTAGE
F2C 4 DIE CAPACITANCE
Ciss
Coss
Crss
IV CURVE
9
8
7
6
5
4
3
2
1
0
02
Vg = 2V
4
Vg = 4V
F2C 4 DIE IV CURVE
6 8 10
Vds in Volts
Vg = 6V
Vg = 8V
12 14 16
Vg = 10V
Vg = 12V
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
F2C 4 DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0.01
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F2212
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
PDF Download

F2212 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 F2211 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
2 F2212 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
3 F2213 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy