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Polyfet RF Devices

SK202 Datasheet Preview

SK202 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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polyfet rf devices
SK202
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
10.0 Watts Push - Pull
Package Style AK
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
200 oC
oo
-65 C to 150 C
3.0 A
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 10.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
40
dB Idq = 0.80 A, Vds = 28.0 V, F =1,000 MHz
% Idq = 0.80 A, Vds = 28.0 V, F =1,000 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 28.0 V, F =1,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 20.00 mA, Vgs = 0V
0.4 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
2
5V
Ids = 0.04 A, Vgs = Vds
gM Forward Transconductance
0.6 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
2.00
Ohm
Vgs = 20V, Ids = 1.00 A
Idsat
Saturation Current
2.80
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
20.0
pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.2 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
12.0
pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/16/2010
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com




Polyfet RF Devices

SK202 Datasheet Preview

SK202 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

SK202
POUT VS PIN GRAPH
SK202 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.4A
16 14.00
14 13.00
12 12.00
Pout
11.00
10
Efficiency = 40%
10.00
8
9.00
6
Gain 8.00
4 7.00
2 6.00
0 5.00
0 0.5 1 1.5 2 2.5 3 3.5 4
PIN IN WATTS
IV CURVE
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
02
vg=2v
S2A 2 DIE IV 6076021-10
46
Vg=4v
8 10 12 14 16 18 20
VVgD=S6vIN VOLTS vg=8v 0 vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
S2A 2 DICE CAPACITANCE
100
10
1
0.1
0
10.00
1.00
4 8 12 16 20
VDS IN VOLTS
ID & GM VS VGS
S2A 2 DIE ID & GM Vs VG
24
Id
28
0.10 gM
0.01
0
2 4 6 8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/16/2010
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com


Part Number SK202
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
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SK202 Datasheet PDF






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