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SK202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

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Datasheet preview – SK202

Datasheet Details

Part number SK202
Manufacturer Polyfet RF Devices
File Size 52.45 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet download datasheet SK202 Datasheet
Additional preview pages of the SK202 datasheet.

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Full PDF Text Transcription

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polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
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