PDB1216E
Description
These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 12V,6A, RDS(ON) =23mΩ @VGS = 4.5V
- Fast switching
- Green Device Available
- G-S ESD Protection Diode Embedded
