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PDB2116S - N+P Dual Channel MOSFET

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number PDB2116S
Manufacturer Potens semiconductor
File Size 435.94 KB
Description N+P Dual Channel MOSFET
Datasheet download datasheet PDB2116S Datasheet

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Full PDF Text Transcription

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20V N+P Dual Channel MOSFETs PDB2116S General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X2 Dual 2EP Pin Configuration BVDSS 20V -20V RDSON 40m 100m ID 3.8A -2.5A Features  Fast switching  Green Device Available  Suit for 1.
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