PDB2309L mosfet equivalent, p-channel mosfet.
* -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications.
DFN2x2-6L 2EP Pin Configuration
DD G
DD S
S SDD
D
GD D
G
D
S
BVDSS -20V
RDSON 28m
ID -8.5A
Features
* .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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