6 views

PDB2309L Datasheet - Potens semiconductor

PDB2309L P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB2309L Features

* -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* HaGnd-held Instruments

* Absolute Maximum Ratin

PDB2309L-Potenssemiconductor.pdf