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PDB3814S - Dual N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet Details

Part number PDB3814S
Manufacturer Potens semiconductor
File Size 544.60 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet PDB3814S Datasheet

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Full PDF Text Transcription

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Preliminary datasheet 30V Dual N-Channel MOSFETs PDB3814S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X2 Dual 2EP Pin Configuration BVDSS 30V RDSON 30m ID 5.0A Features  30V,5.
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