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PDB4854S - Dual N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 S1 G1 D2 D1 G1 G2 S1.

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Datasheet Details

Part number PDB4854S
Manufacturer Potens semiconductor
File Size 551.96 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet PDB4854S Datasheet

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Full PDF Text Transcription

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Preliminary datasheet 40V Dual N-Channel MOSFETs PDB4854S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 40V RDSON 39m ID 4.3A Features  40V,4.
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