PDC0978X - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

100V,65A, RDS(ON) =7.2mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDC0978X
Manufacturer	Potens semiconductor
File Size	920.45 KB
Description	N-Channel MOSFETs
Datasheet	PDC0978X Datasheet
Additional preview pages of the PDC0978X datasheet.

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Full PDF Text Transcription

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100V N-Channel MOSFETs PDC0978X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDD D S S SG G D S BVDSS 100V RDSON 7.2m ID 65A Features  100V,65A, RDS(ON) =7.

Published: Aug 8, 2018 |