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PDC2601X - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V,-90A, RDS(ON) =2.3mΩ@VGS = -10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – PDC2601X

Datasheet Details

Part number PDC2601X
Manufacturer Potens semiconductor
File Size 878.75 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDC2601X Datasheet
Additional preview pages of the PDC2601X datasheet.

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Full PDF Text Transcription

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20V P-Channel MOSFETs PDC2601X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDD D S S SG G D S BVDSS -20V RDSON 2.3m ID -90A Features  -20V,-90A, RDS(ON) =2.
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