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PDC2602X - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,210A, RDS(ON) =1.4mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC2602X
Manufacturer Potens semiconductor
File Size 0.98 MB
Description N-Channel MOSFETs
Datasheet download datasheet PDC2602X Datasheet

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Full PDF Text Transcription

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20V N-Channel MOSFETs PDC2602X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDD D S S SG G D S BVDSS 20V RDSON 1.4m ID 210A Features  20V,210A, RDS(ON) =1.4mΩ@VGS = 4.
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