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PDC3806T - Dual N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,40A, RDS(ON) =6.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC3806T
Manufacturer Potens semiconductor
File Size 478.60 KB
Description Dual N-Channel MOSFETs
Datasheet download datasheet PDC3806T Datasheet

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Full PDF Text Transcription

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30V Dual N-Channel MOSFETs PDC3806T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1 D1 D1 G2 S2 S1G1 G1 G2 S1 D2 S2 BVDSS 30V RDSON 6.5m ID 40A Features  30V,40A, RDS(ON) =6.
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